N-Channel 650 V (D-S) MOSFET

文件：1.08657 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

文件：338.71 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 1.

文件：429.73 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

文件：356.26 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

文件：338.71 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体