P4NA40F1资料datasheet下载贸易商-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
P4NA40F1	文件：198.85 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o 文件：198.85 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P4NA40F1	文件：300 bytes Page：1 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR	ST 意法半导体	ST
STP4NA40F1	文件：198.85 Kbytes Page：10 Pages	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on)and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(o 文件：198.85 Kbytes 页数：10 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P4NB50	文件：0 bytes Page：0 Pages	TO-220	ST 上传：深圳市勤思达科技有限公司	ST
P4SMA150A-E3/61	文件：0 bytes Page：0 Pages	DO-214AC-2	VISHAYVishay Siliconix 威世威世科技公司上传：深圳市金嘉锐电子有限公司	VISHAY

更多P4NA40F1供应商更新时间2026-1-27 15:30:00