isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.9Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

N-Channel MOSFET uses advanced trench technology

文件：1.43512 Mbytes 页数：5 Pages

DOINGTER

杜因特

Power MOSFETs 600V, 4A, N-channel

文件：1.61216 Mbytes 页数：7 Pages

SHINDENGEN

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Shindengen

新电元