10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low • Logic Level Gate Drive\n• 10A, 30V\n• rDS(ON) = 0.0135Ω at ID = 10A, VGS = 10V\n• rDS(ON) = 0.020Ω at ID = 8A, VGS = 4.5V\n• Related Literature\n   - TB334, “Guidelines for Soldering Surface Mount\n      Components to PC Boards”;

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