isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -27A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.86 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Enhancement Mode Field Effect Transistor

文件：245.81 Kbytes 页数：4 Pages

NIKOSEM

尼克森

Power MOSFET

NIKO-SEM

尼克森

P-Channel Enhancement Mode Field Effect Transistor

文件：216.33 Kbytes 页数：4 Pages

NIKOSEM

尼克森

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -41A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max)@VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：333.26 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Enhancement Mode Field Effect Transistor

文件：205.07 Kbytes 页数：4 Pages

NIKOSEM

尼克森