首页 >P303IFSZPH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
[.050”(1.27mm)DensitySolderCup/WireD-Microminiature]MultipleDensitySolderEyeletWithAngleBracket/LessAngleBracket | Cinch CinchConnectivitySolutions | Cinch | ||
Modularconnectors | LUMBERGLumberg 隆堡 | LUMBERG | ||
3.0ABRIDGERECTIFIER Features •HighCurrentCapability •SurgeOverloadRatingto50APeak •HighCaseDielectricStrengthof1500V •IdealforPrintedCircuitBoardApplication •ULListedUnderRecognizedComponentIndex,FileNumberE94661 | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
60V,3ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
60V,3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PD-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,5.1ANPNlowVCEsat(BISS)transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS303PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
30V,5.1ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,5.5ANPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
30V,5.5ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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