This device is especially designed for full color video walls.

Features: —Chip technology: InGaAlP / InGaN on Sapphire —Typ. Radiation: 120° —Color: λdom = 622 nm (● red); λdom = 528 nm (● true green); λdom = 472 nm (● blue) —ESD: 500V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 1B)

文件：1.31129 Mbytes 页数：31 Pages

OSRAM

艾迈斯欧司朗

This device is especially designed for full color video walls.

Features - Package: SMD epoxy package, higher contrast by a black surface (RGB-Displays) - Chip technology: Thinfilm / InGaN on Sapphire - Typ. Radiation: 110° (horizontal), 110° (vertical) - Color: λdom = 621 nm (● red); λdom = 525 nm (● true green); λdom = 472 nm (● blue) - ESD: 500 V acc.

文件：2.12616 Mbytes 页数：28 Pages

OSRAM

艾迈斯欧司朗

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V JFET-Input, Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: 1 pA • Input offset voltage: 50 μV • Input offset drift: 0.45 μV/°C • MUX-friendly inputs • Gain bandwidth: 45 MHz • Slew rate: 150 V/μs • 14-bit se

文件：2.34601 Mbytes 页数：43 Pages

TI

德州仪器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.10746 Mbytes 页数：47 Pages

TI

德州仪器

SINGLE CABLE DUCT

文件：58.33 Kbytes 页数：1 Pages

RICHCO