丝印：P26B；Package：DO-214AA；Thyristor Surge Suppresspr

Features Low capatcitance Cannot be damaged by voltage Will not fatigue Eliminate voltage overshoot Glass passivated junction Halogen free and RoHS compliant Applications CASE: SMBJ(DO-214AA) Molded Plastic UL Flammability Classification Rating 94V0 Mounting Position:Any

文件：2.28235 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：P26B；Package：DO-214AA；Thyristor Surge Suppresspr

Features Low capatcitance Cannot be damaged by voltage Will not fatigue Eliminate voltage overshoot Glass passivated junction Halogen free and RoHS compliant

文件：1.17782 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：P26B；Package：DO-214AA；Thyristor Surge Suppressors (TSS)

Features and Benefits Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit Fails short circuit when surged in excess of ratings Low Capacitance

文件：3.39657 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P26B；Thyristor Surge Suppressors (TSS)

Description DO-214AA Thyristor solid state protection thyristor protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. P Series devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC

文件：670.24 Kbytes 页数：8 Pages

YAGEO

国巨

丝印：P26B；Package：DO-214AC；Thyristor Surge Suppressors (TSS)

Features and Benefits Excellent capability of absorbing transient surge Quick response to surge voltage (ns Level) Eliminates over voltage caused by fast rising transients Moisture sensitivity level: Level 1 Weight 69 mg (approximate) Non degenerative Response Time is

文件：3.40996 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：P26B；Package：DO-214AA；Thyristor Surge Suppressors

文件：324.07 Kbytes 页数：6 Pages

HUAXINAN

华兴安

丝印：P26B；Package：DO-214AA；Thyristor Surge Suppressors

文件：324.39 Kbytes 页数：6 Pages

HUAXINAN

华兴安

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 30mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.59 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=26A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：353.6 Kbytes 页数：2 Pages

ISC

无锡固电

SIDACtor Protection Thyristors

文件：376.56 Kbytes 页数：7 Pages

HUAXINAN

华兴安