首页 >P25Q40H-TSH-IR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA | ||
UltraLowPower,4M/2M/1M/512K-bitSerialMultiI/OFlashMemoryDatasheet 2Description The P25Q40L/20L/10L/05LisaserialinterfaceFlashmemorydevicedesignedforuseinawidevarietyof highvolumeconsumerbasedapplicationsinwhichprogramcodeisshadowedfromFlashmemoryinto embeddedorexternalRAMforexecution.Theflexibleerasearchitectureofthe | PUYAPuran Semiconductor (Shanghai) Co., Ltd 普冉股份普冉半导体(上海)股份有限公司 | PUYA |
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