首页 >P1SMB5950B>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SURFACEMOUNTSILICONZENERDIODE VOLTAGE-11TO200VoltsPower-1.5Watts FEATURES ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowprofilepackage ●Built-instrainrelief ●Glasspassivatedjunction ●Lowinductance ●TypicalIRlessthan1Aabove11V ●Hightemperaturesoldering:260/10s | TRSYS Transys Electronics | TRSYS | ||
SURFACEMOUNTSILICONZENERDIODE(VOLTAGE-11TO200VoltsPower-1.5Watts) FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O • | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
3.0WattsSurfaceMountSiliconZenerDiode | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
SURFACEMOUNTSILICONZENERDIODE FEATURES •Forsurfacemountedapplicationsinordertooptimizeboardspace. •Lowprofilepackage •Built-instrainrelief •Glasspassivatedjunction •Lowinductance •TypicalIRlessthan1.0µAabove12V •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O • | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
3.0WattsSurfaceMountSiliconZenerDiode FEATURES -Lowprofilepackage -Idealforautomatedplacement -Glasspassivatedjunction -Built-instrainrelief -Lowinductance -ComplianttoRoHSDirective2011/65/EUandinaccordancetoWEEE2002/96/EC -Halogen-freeaccordingtoIEC61249-2-21definition | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
3W,11V-200VSurfaceMountSiliconZenerDiodes | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
3.0WSurfaceMountSiliconZenerDiode Features ◇Forsurfacemountedapplicationsinordertooptimizeboardspace ◇Lowprofilepackage ◇Built-instrainrelief ◇Glasspassivatedjunction ◇Lowinductance ◇Hightemperaturesolderingguaranteed:260°C/10secondsatterminals ◇PlasticpackagehasUnderwritersLaboratoryFla | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
3WSURFACEMOUNTZENERDIODE Features ●CompleteVoltageRange3.3to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
CompleteVoltageRange3.3to200Volts FEATURES: *CompleteVoltageRange3.3to200Volts *Highpeakreversepowerdissipation *Highreliability *Lowleakagecurrent | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
ZenerDiodes3W Features ●Glasspassivatedchip ●Built-instrainrelief ●Lowinductance ●Highpeakreversepowerdissipation ●Lowreverseleakage ●Foruseinstabilizingandclipping withhighpowerrating ●RoHScompliant MechanicalData ●Case:DO214AAMoldedplastic ●Lead:SolderableperM | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH |
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