N-Channel High Voltage Mode MOSFET

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UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：330.75 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Low Switching Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC, UPS, PV

文件：331.04 Kbytes 页数：5 Pages

PANJIT

強茂

PEW...PV coupler socket-outlets, low voltage from over 50V up to 690V

文件：102.52 Kbytes 页数：1 Pages

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