首页 >P1443F>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
RBKSKTCAPSCREWM16X55(PK10) | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
SiliconNPNEpitaxialType(PCTProcess)MutingAndSwitchingApplications | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess) MutingAndSwitchingApplications. ●Highemitter-basevoltage:VEBO=25V(min) ●HighreversehFE:reversehFE=150(typ.)(VCE=−2V,IC=−4mA) ●Lowonresistance:RON=1Ω(typ.)(IB=5mA) ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsand | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
SMDBuzzer/Transducer | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
General-PurposeSwitchingDeviceApplications General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=180mΩ(typ.) •InputCapacitanceCiss=490pF(typ.) •4Vdrive •Halogenfreecompliance | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
N-ChannelPowerMOSFET100V,9A,225m,SingleTP/TP-FA Features •ON-resistanceRDS(on)1=180mΩ(typ.) •InputCapacitanceCiss=490pF(typ.) •4Vdrive •Halogenfreecompliance •Protectiondiodein | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
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