isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 126A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：333.5 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：896.57 Kbytes 页数：4 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 126A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.0048Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：333.17 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFETs 100V, 126A, N-channel

文件：1.68877 Mbytes 页数：7 Pages

SHINDENGEN