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STP110N7F6	文件：650.17 Kbytes Page：13 Pages	N-channel68V,0.0055Ωtyp.,110A,STripFET™F6PowerMOSFETinaTO-220package Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团	STMICROELECTRONICS

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STP110N7F6

文件：650.17 Kbytes

Page：13 Pages

N-channel68V,0.0055Ωtyp.,110A,STripFET™F6PowerMOSFETinaTO-220package

Features •Verylowon-resistance •Verylowgatecharge •Highavalancheruggedness •Lowgatedrivepowerloss Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingtheSTripFET™F6technology withanewtrenchgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS

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