N-Channel High Voltage Mode Field Effect Transistor

文件：204.83 Kbytes 页数：4 Pages

NIKOSEM

尼克森

Power MOSFET

NIKO-SEM

尼克森

N-Channel High Voltage Mode Field Effect Transistor

文件：204.12 Kbytes 页数：4 Pages

NIKOSEM

尼克森

Silicon Carbide Schottky Barrier Diode

Features Temperature Independent Switching Behavior High Surge Current Capability Competitive VF 1.3V at rated current Low Conduction Loss Zero Reverse Recovery High junction temperature 175 oC Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard App

文件：440.57 Kbytes 页数：5 Pages

PANJIT

強茂

Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Competitive VF 1.3V at rated current  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249

文件：331 Kbytes 页数：5 Pages

PANJIT

強茂