首页 >OSW10N65>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Silicon650VN-ChannelMOS | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 | NIUHANG | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
650VN-ChannelEnhancementModeMOSFET FEATURES •10A,650V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
650VN-ChannelEnhancementModeMOSFET FEATURES •10A,650V,RDS(ON)=1.0Ω@VGS=10V,ID=5.0A •LowONResistance •FastSwitching •LowGateCharge •FullyCharacterizedAvalancheVoltageandCurrent •SpeciallyDesigenedforACAdapter,BatteryChargeandSMPS •IncompliancewithEURoHs2002/95/ECDirectives | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELENHANCEMENTMODEMOSFET FEATURES •LowCrss •Lowgatecharge •Fastswitching •ImprovedESDcapability •Improveddv/dtcapability •100%avalancheenergytest | RECTRON Rectron Semiconductor | RECTRON | ||
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
650VN-chPlanarMOSFET | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | SKTECHNOLGY |
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