Photologic Reflective Object Sensor

Description: The OPB760N, OPB760T, OPB770N and OPB770T series of reflecƟve assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. OPB760N and OPB760T se

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TTELEC

Photologic® Reflective Object Sensor

Description: The OPB760N, OPB760T and OPB770T series of reflective assemblies feature Photologic® output. The electrical output can be specified as either TTL Totem-Pole or TTL Open-Collector, either of which can be supplied with inverter or buffer output polarity. Features: • Choice of mountin

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TTELEC

包装：散装 类别：传感器，变送器 光学传感器 - 光电，工业 描述：SENSOR REFLCTV 5.58MM TOTEM POLE

OPTE

欧思微电子

NPN SILICON POWER TRANSISTOR

NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 2.5 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 850 Volt Blocking Capability ● 50 W at 25°C Case Temperature

文件：149.13 Kbytes 页数：7 Pages

POINN

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H-BRIDGE CONFIGURATIONS

DESCRIPTION The VN770 is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two Power MOSFETs. The double high side are made using STMicroelectronics VIPower technology; Power MOSFETs are made by using the new advanced strip lay-out technology. Th

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STMICROELECTRONICS

意法半导体

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

DESCRIPTION The VN770P is a device formed by three monolithic chips housed in a standard SO28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower technology. This device is suitable to drive a DC motor in

文件：95.62 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体