OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.10746 Mbytes 页数：47 Pages

TI

德州仪器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V JFET-Input, Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: 1 pA • Input offset voltage: 50 μV • Input offset drift: 0.45 μV/°C • MUX-friendly inputs • Gain bandwidth: 45 MHz • Slew rate: 150 V/μs • 14-bit se

文件：2.34601 Mbytes 页数：43 Pages

TI

德州仪器

OPAx828 Low-Offset, Low-Drift, Low-Noise, 45-MHz, 36-V, JFET-Input Operational Amplifiers

1 Features • Low input voltage noise density: 4 nV/√Hz at 1 kHz • Input voltage noise: 0.1 Hz to 10 Hz: 60 nVRMS • Low input bias current: – 0.1 pA (DGN) – 1 pA (D) • Input offset voltage: – 25 μV (DGN) – 50 μV (D) • Input offset drift: – 0.2 μV/°C (DGN) – 0.45 μV/°C (D) • MUX-friend

文件：3.08485 Mbytes 页数：47 Pages

TI

德州仪器

SLOTTED OPTICAL SWITCHES

Description: Each OPB827, OPB828 and OPB829 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor, mounted on opposite sides of a 0.125” (3.18 mm) wide slot in a low-cost black plastic housing. A variety of aperture sizes are offered (see

文件：252.34 Kbytes 页数：2 Pages

OPTEK

SLOTTED OPTICAL SWITCHES

Description: Each OPB827, OPB828 and OPB829 device consists of an infrared emitting diode (LED, 890 nm center wavelength) and a NPN silicon phototransistor, mounted on opposite sides of a 0.125” (3.18 mm) wide slot in a low-cost black plastic housing. A variety of aperture sizes are offered (see

文件：252.34 Kbytes 页数：2 Pages

OPTEK

SLOTTED OPTICAL SWITCHES

文件：698.82 Kbytes 页数：5 Pages

OPTEK