OPA892DR

Marking：O892；OPA892 2-GHz, 10-V/V Stable, 0.95-nV/√Hz, Ultra-Low THD Operational Amplifier

1Features •Ultra-low0.95-nV/√Hzvoltagenoise •Highspeed: –2-GHzgain-bandwidthproduct –700-V/μsslewrate –30-nssettlingtime(0.1) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc

OPA892DR

Marking：O892；Package：SOIC；OPAx892 2GHz, 10V/V Stable, 0.95nV/√Hz, Ultra-Low THD Operational Amplifiers

1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

OPAX892

OPAx8922GHz,10V/VStable,0.95nV/√Hz,Ultra-LowTHDOperationalAmplifiers

1Features •Ultra-low0.95nV/√Hzvoltagenoise •Highspeed: –2GHzgain-bandwidthproduct –700V/μsslewrate –30nssettlingtime(0.1%) •Stableatgains≥10V/V •Outputdrive,IO=200mA(typical) •Verylowdistortion: –THD=–78dBc(f=1MHz,RL=150Ω) –THD+N=–114dBc(f=

SIR892DP

N-Channel25-V(D-S)MOSFET

SIR892DP

N-Channel25-V(D-S)MOSFET

SIR892DP

N-Channel25-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •Low-SideMOSFETinSynchronousBuckdc-to-dc Converters -GameMachine

SIS892ADN

N-Channel100V(D-S)MOSFET

SIS892ADN

N-Channel100V(D-S)MOSFET

SIS892DN

N-Channel100V(D-S)MOSFET

SISH892BDN

N-Channel100V(D-S)MOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •HighpowerdensityDC/DC •Synchronousrectification •LEDLighting