OPAX607

OPAX60750-MHz,Low-Power,Gainof6-V/VStable,Rail-to-RailOutputCMOSOperationalAmplifier

OPAX607

OPAx60750-MHz,Low-Power,Gainof6-V/VStable,Rail-to-RailOutputCMOSOperationalAmplifier

OPAX607

OPAx863Low-Power,100-MHz,Rail-to-RailInputandOutput,Voltage-FeedbackAmplifier

OPAX607

OPAx863Low-Power,110-MHz,Rail-to-RailInputandOutput,Voltage-FeedbackAmplifier

OPAX607

OPAx863AHigh-Precision,110-MHz,Rail-to-RailInputandOutputAmplifier

1Features •Gain-bandwidthproduct:50-MHz •Highprecision –Inputoffsetvoltage:95-μV(maximum) –Offsetdrift:1-μV/°C(maximum) •Lowpower –Quiescentcurrent:750-μA/ch(typical) –Supplyvoltage:2.7-Vto12.6-V •Inputvoltagenoise:5.9-nV/√Hz •Slewrate:105-V/μs •Rail-to-

OPAX607

OPAx863Low-Power,110-MHz,Rail-to-RailInput/OutputVoltage-FeedbackOpAmps

1Features •Wide-bandwidth –Unity-gainbandwidth:110-MHz(AV=1V/V) –Gain-bandwidthproduct:50-MHz •Lowpower –Quiescentcurrent:700-μA/ch(typical) –Powerdownmode:1.5-μA(maximum,VS=3V) –Supplyvoltage:2.7-Vto12.6-V •Inputvoltagenoise:5.9-nV/√Hz •Slewrate:105-V

OPAX607

TLVx36550-MHz,Zerø-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zerø-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01 •Precision: –Offsetdrift:2μV/°C(maximum) –

OPAX607

TLVx36550-MHz,Zerø-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zerø-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –Offsetdrift:2μV/°C(maximum

OPAX607

TLVx36550MHz,Zero-Crossover,High-CMRR,RRIOOperationalAmplifiers

1Features •Gainbandwidth:50MHz •Zero-crossoverdistortiontopology: –CMRR:115dB(typical) –Rail-to-railinputandoutput •Input100mVbeyondsupplyrail •Noise:4.5nV/√Hz •Slewrate:27V/μs •Fastsettling:0.2μsto0.01% •Precision: –Offsetdrift:2μV/°C(maximum) –In

OPB607A

REFLECTIVEOBJECTSENSORS

Description: OPB606consistsofaninfraredLightEmittingDiode(LED)andanNPNsiliconphototransistorwhicharemounted“side-by-side”onparallelaxesinablackopaqueplastichousing. TheOPB607consistsofaninfraredLightEmittingDiode(LED)andanNPNsiliconphotodarlingtonwhich