丝印：OPA593；Package：WSON；OPA593 85-V, 250-mA Output Current, Precision, Power Op Amp

1 Features • Wide power-supply range: – 8 V (±4 V) to 85 V (±42.5 V) • Low offset voltage: ±20 μV • Low offset voltage drift: ±0.4 μV/°C • High output current: 250 mA • Wide gain bandwidth: 10 MHz • High slew rate: 45 V/μs, rising • Low noise: 7 nV/√Hz at 10 kHz • Mux-friendly inputs • R

文件：2.60211 Mbytes 页数：38 Pages

TI

德州仪器

丝印：OPA593；Package：WSON(DNT)；OPA593 85-V, 250-mA Output Current, Precision, Power Op Amp

1 Features • Wide power-supply range: – 8 V (±4 V) to 85 V (±42.5 V) • Low offset voltage: ±20 μV • Low offset voltage drift: ±0.4 μV/°C • High output current: 250 mA • Wide gain bandwidth: 10 MHz • High slew rate: 45 V/μs, rising • Low noise: 7 nV/√Hz at 10 kHz • Mux-friendly inputs • R

文件：2.77216 Mbytes 页数：40 Pages

TI

德州仪器

丝印：OPA593；Package：WSON(DNT)；OPA593 85-V, 250-mA Output Current, Precision, Power Op Amp

1 Features • Wide power-supply range: – 8 V (±4 V) to 85 V (±42.5 V) • Low offset voltage: ±20 μV • Low offset voltage drift: ±0.4 μV/°C • High output current: 250 mA • Wide gain bandwidth: 10 MHz • High slew rate: 45 V/μs, rising • Low noise: 7 nV/√Hz at 10 kHz • Mux-friendly inputs • R

文件：2.77216 Mbytes 页数：40 Pages

TI

德州仪器

PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES New Electro-Optical Design Wide Effective Area, Low Noise Bialkali Photocathode 185 nm to 710 nm, 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type FEATURES ● New Electro-Optical Design Structure ● Low Noise ● Wide Effective Area 10

文件：152.39 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications

文件：156.08 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司