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BC337

Si-EpitaxialPlanarTransistors

GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92(10D3) •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack

DiotecDIOTEC

德欧泰克

BC337

AmplifierTransistor

TheLM337isanadjustable3–terminalnegativevoltageregulatorcapableofsupplyinginexcessof1.5Aoveranoutputvoltagerangeof–1.2Vto–37V.Thisvoltageregulatorisexceptionallyeasytouseandrequiresonlytwoexternalresistorstosettheoutputvoltage.Further,itemploysi

MotorolaMotorola, Inc

摩托罗拉

BC337

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications Thesetypesaresubdividedintothreegroups-16, -25and-40,accordingtotheirDCcurrentgain.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

BC337

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaTO-92;SOT54plasticpackage. PNPcomplement:BC327. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification, e.g.driverandoutputstagesofaudioamplifiers.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BC337

NPNSiliconAFTransistors(HighcurrentgainHighcollectorcurrentLowcollector-emittersaturationvoltage)

●Highcurrentgain ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC327,BC328(PNP)

SIEMENS

Siemens Ltd

BC337

TO-92Plastic-EncapsulateTransistors(NPN)

TRANSISTOR(NPN) FEATURES ●Powerdissipation

TGS

Tiger Electronic Co.,Ltd

BC337

NPNPlastic-EncapsulateTransistor

SECOS

SeCoS Halbleitertechnologie GmbH

BC337

EPITAXIALPLANARNPNTRANSISTOR

KECKEC CORPORATION

KEC株式会社

BC337

NPNPlastic-EncapsulateTransistors

FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage V(BR)CBO:BC33750V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

SECOS

SeCoS Halbleitertechnologie GmbH

BC337

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedfordriverandoutputstageofaudioamplifiers.

DCCOMDc Components

直流元件直流元件有限公司

BC337

45V,500mANPNgeneral-purposetransistors

Generaldescription NPNgeneral-purposetransistors. Features ■Highcurrent ■Lowvoltage Applications ■General-purposeswitchingandamplification

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BC337

NPNGeneralPurposeTransistor

WEITRONWEITRON

威堂電子科技

BC337

SWITCHINGANDAMPLIFIERAPPLICATIONS

SWITCHINGANDAMPLIFIERAPPLICATIONS FEATURES *SuitableforAF-Driverstagesandlowpoweroutputstages *ComplementtoUTCBC327/328

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

BC337

AmplifierTransistors

AmplifierTransistorsNPNSilicon Features •Pb−FreePackagesareAvailable*

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC337

AmplifierTransistorsNPNSilicon

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BC337

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.8A Collector-basevoltage VCBO:BC33750V BC33830V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

BC337

SWITCHINGANDAMPLIFIERAPPLICATIONS

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

BC337

TO-92PACKAGE

KECKEC CORPORATION

KEC株式会社

BC337

GeneralPurposeSi-EpitaxialPlanarTransistors

DiotecDIOTEC

德欧泰克

BC337

AmplifierTransistorsNPNSILICON

ONSEMION Semiconductor

安森美半导体安森美半导体公司

详细参数

  • 型号:

    OPA337

  • 制造商:

    BB

  • 制造商全称:

    BB

  • 功能描述:

    MicroSIZE, Single-Supply CMOS OPERATIONAL AMPLIFIERS MicroAmplifier ⑩ Series

供应商型号品牌批号封装库存备注价格
TI/BB
08+
SOP8
4
特价热销现货库存100%原装正品欢迎来电订购!
询价
BB
2008
MSOP-8
7503
询价
BB
23+
MSOP8
2800
绝对全新原装!现货!特价!请放心订购!
询价
BB
22+
MSOP8
6980
原装现货,可开13%税票
询价
BURR-BROWN
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
BURR-BROWN
23+
SOT23-5
50000
全新原装正品现货,支持订货
询价
TI/德州仪器
22+
SOP-8
9000
原装正品
询价
BURR-BROWN
2022
SOT23-5
80000
原装现货,OEM渠道,欢迎咨询
询价
BB
23+
MSOP8
4500
全新原装、诚信经营、公司现货销售!
询价
TI/德州仪器
DIPSOP
50000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
更多OPA337供应商 更新时间2024-6-4 14:10:00