S2387

SiphotodiodeForvisibletoIR,general-purposephotometry

SI2387DS

P-Channel80V(D-S)MOSFET

FEATURES •TrenchFET®GenIVp-channelpowerMOSFET •100RgandUIStested •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Loadswitch •Circuitprotection •Motordrivecontrol

TA2387A

SAWFilter1480MHz

TCRO2387

SMDVOLTAGECONTROLLEDOSCILLATOR(12.7X12.7X6.0MM)

FEATURES CERAMICCOAXIALRESONATOR,LOWPHASENOISE FREQUENCYRANGE:400~5000MHZ TWOSTANDARDPACKAGES/ROHSCOMPLIANT

TLV2387

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

1Features •Ultra-lowoffsetvoltage:±10μV(maximum) •Zerodrift:±0.01μV/°C •Low-inputbiascurrent:300pA(maximum) •Lownoise:8.5nV/√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.7MHz •Quiesc

TLV2387

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

1Features •Ultra-lowoffsetvoltage:±10μV(maximum) •Zerodrift:±0.01μV/°C •Low-inputbiascurrent:300pA(maximum) •Lownoise:8.5nV/√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.7MHz •Quiesc

TLV2387

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

1Features •Ultra-lowoffsetvoltage:±10μV(maximum) •Zerodrift:±0.01μV/°C •Low-inputbiascurrent:300pA(maximum) •Lownoise:8.5nV/√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.7MHz •Quiesc

TLV2387

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

TLV2387

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

TLV2387DGKR

TLVx387HighPrecision,Zero-Drift,Low-Input-Bias-CurrentOpAmps

1Features •Ultra-lowoffsetvoltage:±10μV(maximum) •Zerodrift:±0.01μV/°C •Low-inputbiascurrent:300pA(maximum) •Lownoise:8.5nV/√Hzat1kHz •No1/fnoise:177nVPP(0.1Hzto10Hz) •Common-modeinputrange±100mVbeyond supplyrails •Gainbandwidth:5.7MHz •Quiesc