LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler dr

文件：215.37 Kbytes 页数：6 Pages

IRF

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.022Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATION

文件：201 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S) MOSFET

文件：979.18 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

50A,60V Heatsink Planar N-Channel Power MOSFET

文件：1.12852 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体