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OM50N05ST

LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

DESCRIPTION ThisseriesofhermeticpackagedMOSFETsareideallysuitedforlowvoltageapplications;batterypoweredvoltagepowersupplies,motorcontrols,dctodcconvertersandsynchronousrectification.Thelowconductionlossallowssmallerheatsinkingandthelowgatechargesimplerdr

IRF

International Rectifier

RFG50N05

50A,50V,0.022Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr

Intersil

Intersil Corporation

RFG50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFG50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

Intersil

Intersil Corporation

RFP50N05

50A,50V,0.022Ohm,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFET’SmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingr

Intersil

Intersil Corporation

RFP50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP50N05L

50A,50V,0.022Ohm,LogicLevel,N-ChannelPowerMOSFETs

Thesearelogic-levelN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic-level(5V)dri

Intersil

Intersil Corporation

UTT50N05

50A,50VN-CHANNELENHANCEMENTMODEPOWERMOSFETTRANSISTOR

DESCRIPTION TheUTCUTT50N05isanN-channelenhancementpowerMOSFETusingUTC’sadvancedtechnologytoprovidethecustomerswithperfectRDS(ON),highswitchingspeed,highcurrentcapacityandlowgatecharge. TheUTCUTT50N05issuitableformotorcontrol,AC-DCorDC-DCconvertersandaudi

UTCUnisonic Technologies

友顺友顺科技股份有限公司

详细参数

  • 型号:

    OM50N05ST

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE

供应商型号品牌批号封装库存备注价格
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
PHI
23+
SOP
3600
绝对全新原装!现货!特价!请放心订购!
询价
PHI
24+
SOP
6980
原装现货,可开13%税票
询价
PHI
25+
SOP
4500
全新原装、诚信经营、公司现货销售!
询价
PHI
24+
41
询价
PHIL
2016+
DIP
6528
只做进口原装现货!假一赔十!
询价
PHI
24+
DIP
5000
全现原装公司现货
询价
PHI
24+
DIP28
3629
原装优势!房间现货!欢迎来电!
询价
PHIL
25+23+
DIP
23563
绝对原装正品全新进口深圳现货
询价
PHI
20+
DIP
11520
特价全新原装公司现货
询价
更多OM50N05ST供应商 更新时间2025-7-28 9:07:00