GaAs Hall Device

GaAs Hall Device Magnetic sensor ■ Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06/°C • Mini type (4-pi

文件：44.95 Kbytes 页数：2 Pages

PANASONIC

松下

GaAs Hall Device

Panasonic

松下

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

文件：344.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

GATE TURN THYRISTORS

文件：463.07 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Dual-band Wi-Fi Embedded Antenna

文件：89.58 Kbytes 页数：2 Pages

WPI