GaAs Hall Device

GaAs Hall Device Magnetic sensor ■ Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06/°C • Sealed in the

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PANASONIC

松下

GaAs Hall Device

Panasonic

松下

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

文件：344.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

NPN Darlington Transistors

NPN Darlington Transistors TO-204MA (TO-3)

文件：344.75 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Accessories & Service

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IVO

堡盟电子