TDD LTE Bands 34/39, FDD LTE Bands 1/2, WCDMA Bands 1/2, CDMA Band BC1

The NZ5401S is a 10-pin power amplifier module developed for TDD LTE/FDD LTE/WCDMA/ CDMA applications. With advanced InGaP HBT technology, the module supports full bandwidth of TDD LTE Bands 34/39, FDD LTF Bands 1/2, WCDMA Bands 1/2, CDMA Band BC1, and meets the stringent linearity requirements of L • TDD LTE Bands 34/39(2010-2025MHz, 1880-1920MHz)\n• FDD LTE Bands 1/2(1920MHz-1980MHz, 1850MHz-1910MHz)\n• WCDMA Bands 1/2(1920-1980MHz, 1850-1910MHz)\n• CDMA Band BC1(1850-1910MHz)\n• Supply Voltage 3V-4.5V\n• High efficiency\n• Good Linearity\n• APT Compatible VCC2 adjustable to improve PAE\n• In;

Lansus

飞骧

RF 放大器

Lansus

飞骧

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBT5550. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • Switching and amplification in high voltage applications such as telephony.

文件：43.87 Kbytes 页数：8 Pages

PHI

PHI

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a SOT323 plastic package. NPN complements: PMST5550 and PMST5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose • Telephony.

文件：56.53 Kbytes 页数：8 Pages

PHI

PHI

SMALL SIGNAL PNP TRANSISTORS

■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER

文件：37.09 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体