Automotive Power MOSFET Module

Features • Back to Back Mosfet Load Switch Module • Temp Sensing • Electrically Isolated DBC Substrate for Low Rthjc • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • AQG324 Qualified • UL 94 V−0 • ESD Tested for HBM and CDM per AEC Q101, JS−00

文件：663.73 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Automotive Power MOSFET Module

eatures • Back to Back Mosfet Load Switch Module • Temp Sensing • Electrically Isolated DBC Substrate for Low Rthjc • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • AQG324 Qualified • UL 94 V−0 • ESD Tested for HBM and CDM per AEC Q101, JS−001

文件：691.44 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Automotive 80V, 2 channel back to back Mosfet Module, APM17

80V 0.58mΩ Automotive 2 Channel back to back Mosfet Power module for battery or road switch for 48V mild hybrid vehicle’s applications, electrically isolated DBC substrate, temp sense and Automotive AQG324 Qualified. • Back to Back Mosfet load switch Module\n• Temp sensing\n• Electrically Isolated DBC Substrate for Low Rthjc\n• Compact Design for Low Total Module Resistance\n• Module Serialization for Full Traceability\n• AQG324 Qualified\n• UL 94 V−0\n• This Device is Pb−Free and is RoHS Compliant\n• ESD Tested;

ONSEMI

安森美半导体

Automotive Power MOSFET Module

eatures • Back to Back Mosfet Load Switch Module • Temp Sensing • Electrically Isolated DBC Substrate for Low Rthjc • Compact Design for Low Total Module Resistance • Module Serialization for Full Traceability • AQG324 Qualified • UL 94 V−0 • ESD Tested for HBM and CDM per AEC Q101, JS−001

文件：691.44 Kbytes 页数：10 Pages

ONSEMI

安森美半导体