1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. It has a strained Multiple Quantum Well (st-MQW) DC-PBH laser diode that features high output

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NEC

瑞萨

LASER DIODE

1 480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE DESCRIPTION The NX7460LE is a 1 480 nm pumping laser diode module with optical isolator for an EDFA (Er Doped optical Fiber Amplifier) that can expand the transmission span and compensate optical losses. The device is a Multiple Qu

文件：207.01 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel 60-V (D-S) Fast Switching MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile

文件：64.25 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) Fast Switching MOSFET

文件：500.59 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60-V (D-S) Fast Switching MOSFET

文件：332.45 Kbytes 页数：12 Pages

VISHAYVishay Siliconix

威世威世科技公司