NX6508GH53中文资料瑞萨数据手册PDF规格书

1 470 TO 1 610 nm FOR 2.5 Gb/s, CWDM

InGaAsP MQW-DFB LASER DIODE

DESCRIPTION

The NX6508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)

structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.

These devices are ideal for 2.5 Gb/s CWDM application.

FEATURES

• Optical output power Po = 5.0 mW

• Peak emission wavelength λp = 1 470 to 1 610 nm (Based on CWDM)

• Low threshold current lth = 10 mA

• High speed tr = 100 ps MAX.

tf = 150 ps MAX.

• Side mode suppression ratio SMSR = 40 dB

• Operating case temperature range TC = −20 to +85°C

• InGaAs monitor PIN-PD

• CAN package φ 5.6 mm

• Based on Telcordia reliability