NX6350GP31中文资料瑞萨数据手册PDF规格书

1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE

FOR 40GBASE-LR4 & 10 Gb/s E-PON ONU APPLICATION

DESCRIPTION

The NX6350GP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum

Well (MQW) structured Distributed Feed-Back (DFB) laser diode with

InGaAs monitor PIN-PD.

APPLICATIONS

• 40GBASE-LR4

• 10 Gb/s E-PON ONU

• Bi-Directional 10G SFP+ (CPRI,10G-Ethernet)

FEATURES

• Optical output power PO = 8.5 mW

• Low threshold current Ith = 8 mA

• Differential efficiency ηd = 0.35 W/A

• Wide operating temperature range TC = −5 to +85°C

• InGaAs monitor PIN-PD

• CAN package φ 5.6 mm

• Focal point 7.5 mm