NX25F021B-3V中文资料etc未分类制造商数据手册PDF规格书

[NexFlash]

DESCRIPTION

The NX25F011B, NX25F021B, and NX25F041B Serial Flash memories provide a storage solution for systems limited in power, pins, space, hardware, and firmware resources. They are ideal for applications that store voice, text, and data in a portable or mobile environment. Using NexFlashs patented single transistor EEPROM cell, the devices offer a high-density, low-voltage, low-power, and cost-effective non-volatile memory solution. The devices operate on a single 5V or 3V (2.7V-3.6V) supply for Read and Erase/Write with typical current consumption as low as 2.5 mA active and less than 1 µA standby. Sector erase/write speeds as fast as 7.5 ms increase system performance, minimize power-on time, and maximize battery life.