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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
ADXL1004BCPZ	文件：442.73 Kbytes Page：14 Pages	LowNoise,WideBandwidth,MEMSAccelerometer	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADXL1004BCPZ-RL	文件：442.73 Kbytes Page：14 Pages	LowNoise,WideBandwidth,MEMSAccelerometer	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
AIVR1004	文件：201.17 Kbytes Page：8 Pages	StandardCMOSprocess.	APLUSAPLUS APLUS	APLUS
AIVR1004	文件：122.24 Kbytes Page：8 Pages	tandardCMOSprocess	APLUSAPLUS APLUS	APLUS
AN1004	文件：1.07567 Mbytes Page：16 Pages	Abroadportfolioofhighperformance,best-in-classSerialMemoryProductstomeetallyourdesignrequirements.	MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司	Microchip
APE1004	文件：293.89 Kbytes Page：6 Pages	verylowcostvoiceandmelodysynthesizerwith4-bitsCPU GeneralDescription TheAPExx04seriesareverylowcostvoiceandmelodysynthesizerwith4-bitsCPU.Theyhavevariousfeaturesincluding4-bitsALU,ROM,RAM,I/Oports,timers,clockgenerator,voiceandmelodysynthesizer,andPWM(Directdrive)output,etc.Theaudiosynthesizercontainson	APLUSAPLUS APLUS	APLUS
APE1004H	文件：88.37 Kbytes Page：3 Pages	THESLIMPOWERRELAY FEATURES •Slimsize 28mm(L)×5mm(W)×15mm(H) 1.102inch(L)×.197inch(W)×.591inch(H) permitshighdensitymounting •Wideswitchingcapacity:100mA/12VDC-6A/250VAC •Highsensitivity:170mW •Highbreakdown(4,000V)andsurge(6,000V)voltagebetweencontactsand	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
APT1004	文件：49.92 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1004RAN	文件：310.12 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.9A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1004RBN	文件：361.08 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1004RBN	文件：50.93 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1004RCN	文件：49.92 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1004RCN	文件：297.75 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1004RDN	文件：332.48 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=4.4A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1004RGN	文件：297.25 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3.3A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT1004RGN	文件：50.25 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV™ N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1004RKN	文件：51.05 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT1004RKN	文件：332.91 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3.6A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ARD1004H	文件：541.41 Kbytes Page：8 Pages	26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS
ARD1004HC	文件：541.41 Kbytes Page：8 Pages	26.5GHz,18GHzCOAXIALSWITCH FEATURES 1.Highfrequencycharacteristics(Impedance50Ω) 2.SPDTandtransfertypeavailable 3.Highsensitivity Nominaloperatingpower:840mW(SPDT,Failsafetype) 1540mW(Transfer,Failsafetype) 4.Longlife:5×106(SPDT) TYPICALAPPLICATIONS Wirelessandmobile	NAISPanasonic electrical machinery (China) Co. , Ltd. 松下电器松下电器机电(中国)有限公司	NAIS

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市宏捷佳电子科技有限公司	NW1004-AL	NEWAVE	2023+	PLCC52	50000	原装现货	询价
深圳市近平电子有限公司	NW1004-BL	NEWAVE	6000	面议	19	PLCC-52	询价
深圳市佳鑫美电子科技有限公司	NW1004-DQ	NEWAVE	22+	QFP	2789	全新原装自家现货!价格优势!	询价
千层芯半导体(深圳)有限公司	NW100K-D	Noisewave	23+	模块	400		询价
深圳市福田区亿兴成电子商行	NW101			BGA	830		询价
深圳诚思涵科技有限公司	NW102	NEWAVE	16+	BGA	2500	进口原装现货/价格优势!	询价
中科航电(深圳)半导体技术有限公司	NW102			BGA	219	100%原装正品!现货热价热卖!可开17%增值税票!	询价
深圳市博浩通科技有限公司	NW1024BL	NEW	23+	PLCC	1155	专业优势供应	询价
深圳市一线半导体有限公司	NW1024BL	NEWAVE	1	PLCC-32	2272		询价
深圳市富芯乐电子科技有限公司	NW1024BL	NEWAVE	22+	PLCC-32	3000	原装现货	询价

更多NW1004-AL供应商更新时间2024-6-19 15:03:00

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