NVXK2TR40WXT数据手册ONSEMI中文资料规格书

描述 Description

SiC Power MOSFET Module 1200 V, 40 mOhm in Dual H -Bridge configuration , Al²O³ DBC substrate.

特性 Features

• DIP Silicon Carbide Dual H-Bridge power module for on-board charger (OBC) for xEV applications
• Enable Design of Small, Efficient and Reliable System for Reduced Vehicle Fuel Consumption and CO2 Emission
• Creepage and clearance per IEC60664-1, IEC 60950-1
• Simplified Assembly, Optimized Layout, High Level of Integration, and Improved Thermal Performance
• Compact design
• Module serialization for full traceability
• Lead free, ROHS and UL94V-0 compliant
• Automotive qualified per AEC-Q101 and AQG324

应用 Application

• Onboard Charger and HV DC DC in EV−PHEV
• 11 -22kW On−board Charger for EV−PHEV