NVVR26A120M1WSS中文资料碳化硅（SiC）模块 – EliteSiC主驱逆变器功率模块900V，单侧直接散热，2.6mΩ Rds_on，1200V，半桥，Straight Power Tab数据手册ONSEMI规格书

描述 Description

The NVVR26A120M1WST is part of a family of silicon carbide (SiC) power modules for Hybrid (HEV) and Electric Vehicle (EV) traction inverter applications. The module consists of two 1200V SiC MOSFETs in a Half-Bridge configuration. The SiC chipset utilizes the M1 SiC technology from onsemi in providing high current density, robust short circuit protection, high block voltage, and high operating temperature to deliver class-leading performance in EV traction applications.

特性 Features

• Half-Bridge Single Side Cooling
• Scalable, Modular, and Compact
• Ultra-Low Stray Inductance
• Low Energy Losses
• Ultra-Low Rds_on
• Reduce Conduction Losses
•
• Tvj.Max = 175°C
• Tvj.Max = 175°CTj_max = 175°C continuous operation
• High Inverter Peak Output Power
• Automotive Grade SiC MOSFET Technology
• Automotive Qualified and Improve Quality
• Sintering Technology for Die Attach
• High Reliability and Lower Thermal Resistance

应用 Application

• Automotive Traction Inverter
• Main Traction Inverter for Battery Electric Vehicle, Plug-in Hybrid Vehicles, and Full Hybrid Vehicles