MOSFET ??Power, Single N-Channel 40 V, 4.8 m, 75 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.37 Kbytes 页数：7 Pages

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安森美半导体

丝印：005N04CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 40 V, 4.8 m, 75 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：332.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel

MOSFET – Power, Single, N-Channel, 40 V, 4.8 mΩ, 75 A • Low RDS(on)\n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• Small Footprint (3.3 x 3.3mm)\n• Compact Design\n• AEC−Q101 Qualified and PPAP Capable\n• These Devices are Pb−Free and are RoHS Compliant;

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 5.6 m, 71 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：340.08 Kbytes 页数：7 Pages

ONSEMI

安森美半导体