MOSFET - Power, Single N-Channel 100 V, 2.8 m, 177 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：159.45 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 100 V, 2.8 m, 177 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant

文件：159.45 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 2.8 m, 175 A

文件：129.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A

文件：320.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 100 V, 2.3 m, 236 A

文件：320.56 Kbytes 页数：8 Pages

ONSEMI

安森美半导体