丝印：025P04；Package：SO8FL；MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features • NVMFWS025P04M8L − Wettable Flanks Product • Small Footprint for Compact Design 5 x 6 mm • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：199.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET, Single P-Channel, -40 V, 23 mΩ, -34.6 A

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3x3 mm)\n• Compact Design\n• Low RDS on \n• Minimize Conduction Losses\n• Low Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Suitable for Automotive Applications\n• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS Compliant;

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features • NVMFWS025P04M8L − Wettable Flanks Product • Small Footprint for Compact Design 5 x 6 mm • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：199.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

ON
QFN8

ON

上传：深圳市鼎欣微电子有限公司

ON
8-PowerTDFN

ON

上传：深圳市广弘电子有限公司