NVM3060中文资料ETC数据手册PDF规格书

[ITT Semiconductors]

Introduction

Electrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each.

The NVM 3060 is intended for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/3000 series Central Control Units or the SAA 12xx and TVPO 2066 Remote Control and Tuning ICs. It serves for storing the tuning information as well as several analog settings, further alignment information given in the factory when producing the TV set. The stored information remains stored even with the supply voltages switched off. Reading and programming operations are executed via the IM bus (see section 5.). Input and output signals are TTL level. An address option input provides the possibility to operate two memories in parallel, to obtain a total storage capacity of 8192 bits.

The device contains an on-chip charge pump for high programming voltage generation and an on-chip clock oscillator.