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SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: •BV(CBO)=250Voltsminimum •600WPowerDissipation •ExcellentSOACurve •Es/bof800mJ •Gainofover5at200A •HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring •PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分类制造商

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz •

SonySony Semiconductor Solutions Group

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Ultrasmallpackage •Lowvoltageoperation •Lownoise:NF=1.

SonySony Semiconductor Solutions Group

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features •Lowvoltageoperation •Lownoise:NF=1.5dB(typ.)at900MHz •

SonySony Semiconductor Solutions Group

索尼

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30µVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微电子(北京)股份有限公司

详细参数

  • 型号:

    NVD2014

  • 制造商:

    SILAN

  • 制造商全称:

    Silan Microelectronics Joint-stock

  • 功能描述:

    Vertical Driver for 4-Phase CCD Sensors

供应商型号品牌批号封装库存备注价格
NEXTCHIP
21+
TSSOP16
9800
只做原装正品假一赔十!正规渠道订货!
询价
NEXTCHIP
23+
TSSOP-16
8293
询价
原厂正品
23+
TSOP
5000
原装正品,假一罚十
询价
NEXTCHI
2020+
TSSOP16
10206
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NEXTCHIP
24+
TSSOP16
5000
原装现货
询价
NEXTCHIP
23+
TSSOP
7750
全新原装优势
询价
NEXTCHIP
24+
TSSOP16
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
NEXTCHIP
22+
TSSOP-16
8200
全新原装现货!自家库存!
询价
NEXTCHIP
25+23+
TSSOP16
27346
绝对原装正品全新进口深圳现货
询价
NEXTCHIP
6000
面议
19
TSSOP-16
询价
更多NVD2014供应商 更新时间2025-5-24 13:10:00