NVB190N65S3F数据手册ONSEMI中文资料规格书

描述 Description

SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.

特性 Features

• 700 V @ TJ = 150°C
• Higher system reliability at low temperature operation
• Ultra Low Gate Charge (Typ. Qg = 34 nC)
• Lower switching loss
• Low Effective Output Capacitance (Typ. Coss(eff.) = 314 pF)
• Lower switching loss
• AEC−Q101 Qualified and PPAP Capable
• AEC−Q101 Qualified and PPAP Capable
• Typ. RDS(on) = 158 mΩ
• 100% Avalanche Tested
• RoHS Compliant

应用 Application

• HV DC/DC converter
• On Board Charger
• DC/DC Converter