NV25512MUW中文资料EEPROM Serial 512-Kb SPI - Automotive Grade 1 (+125°C), Wettable Flank UDFN Package数据手册ONSEMI规格书

描述 Description

The NV25512MUW is a EEPROM Serial 512-Kb SPI - Automotive Grade 1 (+125°C) in a small-footprint Wettable Flank UDNF-8 package. This features a 128-byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the NV25512 device. The device features software and hardware write protection, including partial as well as full array protection.

特性 Features

• Automotive Temperature Grade 1 (-40°C to +125°C)
• Allows the use in safety critical application
• 1.8 V to 5.5 V Supply Voltage Range
• Single power supply from 1.8 V to 5.5 V. Functional over the entire temperature range
• Wettable Flank UDFN Package Supports Auto-Optical Inspection
• 10 MHz SPI Compatible
• SPI Modes (0,0) & (1,1)
• 128-byte Page Write Buffer
• Self-timed Write Cycle
• Hardware and Software Protection
• NV Prefix for Automotive and Other Applications Requiring Site and Change Control
• Block Write Protection - Protect ¼, ½ or Entire EEPROM Array
• Low Power CMOS Technology
• 1,000,000 Program/Erase Cycles
• This Device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
• 100 Year Data Retention

应用 Application

• Door module
• Seat control unit
• Body computer & energy management unit
• Immobilizer unit
• Wiper module
• Fan control unit
• Park assist unit
• Light management unit
• Electronic parking brake
• Engine Start/Stop control unit
• Engine control unit
• ABS/ESP (Electronic Stability Program)
• Airbag
• Integrated navigation and infotainment systems
• Electric steering control unit, ESL
• Motor Vehicles

简介

NV25512MUW属于集成电路（IC）的存储器。由制造生产的NV25512MUW存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。