NV25512MUW集成电路（IC）的存储器规格书PDF中文资料

NV25512MUW属于集成电路（IC）的存储器。由安森美半导体制造生产的NV25512MUW存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The NV25512 is a EEPROM Serial 512−Kb SPI Automotive

Grade 1 device internally organized as 64Kx8 bits. This features a

128−byte page write buffer and supports the Serial Peripheral

Interface (SPI) protocol. The device is enabled through a Chip Select

CS) input. In addition, the required bus signals are clock input (SCK),

data input (SI) and data output (SO) lines. The HOLD input may be

used to pause any serial communication with the NV25512 device.

The device features software and hardware write protection, including

partial as well as full array protection.

On−Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

特性 Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• 10 MHz SPI Compatible

• 1.8 V to 5.5 V Supply Voltage Range

• SPI Modes (0,0) & (1,1)

• 128−byte Page Write Buffer

• Additional Identification Page with Permanent Write Protection

• Self−timed Write Cycle

• Hardware and Software Protection

• Block Write Protection

− Protect 1/4, 1/2 or Entire EEPROM Array

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Wettable Flank UDFN 8−pad Package

• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant