NV25256DTHFT3G集成电路（IC）的存储器规格书PDF中文资料

NV25256DTHFT3G属于集成电路（IC）的存储器。由安森美半导体制造生产的NV25256DTHFT3G存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

NV25128, NV25256 are EEPROM Serial 128/256 kb SPI

Automotive Grade 0 devices internally organized as 16K/32Kx8 bits.

It features a 64−byte page write buffer and supports the Serial

Peripheral Interface (SPI) protocol. The device is enabled through a

Chip Select (CS) input. In addition, the required bus signals are clock

input (SCK), data input (SI) and data output (SO) lines. The HOLD

input may be used to pause any serial communication with the

NV25xxx device. The device features software and hardware write

protection, including partial as well as full array protection. Byte

Level On−Chip ECC (Error Correction Code) makes the device

suitable for high reliability applications. The device offers an

additional Identification Page which can be permanently write

protected.

特性 Features

• Automotive AEC−Q100 Grade 0 (−40°C to +150°C) Qualified

• 2.5 V to 5.5 V Supply Voltage Range

• 10 MHz SPI Compatible

• SPI Modes (0,0) & (1,1)

• 64−byte Page Write Buffer

• Self−timed Write Cycle

• Hardware and Software Protection

• Additional Identification Page with Permanent Write Protection

• NV Prefix for Automotive and Other Applications Requiring Site and

Change Control

• Block Write Protection

− Protect 1/4, 1/2 or Entire EEPROM Array

• Low Power CMOS Technology

• Program/Erase Cycles:

− 4,000,000 at 25°C

− 1,200,000 at +85°C

− 600,000 at +125°C

− 300,000 at +150°C

• 200 Year Data Retention

• SOIC, TSSOP 8−lead Packages

• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS

Compliant