NV24C512MUW集成电路（IC）的存储器规格书PDF中文资料

NV24C512MUW属于集成电路（IC）的存储器。由安森美半导体公司制造生产的NV24C512MUW存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The NV24C512MUW is a EEPROM Serial 512−Kb I2C, internally

organized as 65,536 words of 8 bits each.

It features a 128−byte page write buffer and supports the Standard

(100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocol.

Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

External address pins make it possible to address up to eight

NV24C512MUW devices on the same bus.

On−Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

特性 Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• Supports Standard, Fast and Fast−Plus I2C Protocol

• 2.5 V to 5.5 V Supply Voltage Range

• 128−Byte Page Write Buffer

• Hardware Write Protection for Entire Memory

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• 8−lead SOIC, TSSOP, UDFN and 8−ball WLCSP Packages

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant