NV24C128MUW3VTBG集成电路（IC）的存储器规格书PDF中文资料

NV24C128MUW3VTBG属于集成电路（IC）的存储器。由安森美半导体公司制造生产的NV24C128MUW3VTBG存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The NV24C128MUW is a EEPROM Serial 128−Kb I2C

Automotive Grade 1, internally organized as 16,384 words of 8 bits

each. It features a 64−byte page write buffer and supports both the

Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C

protocol. Write operations can be inhibited by taking the WP pin High (this

protects the entire memory).

On−Chip ECC (Error Correction Code) makes the device suitable

for high reliability applications.

特性 Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• Supports Standard, Fast and Fast−Plus I2C Protocol

• 2.5 V to 5.5 V Supply Voltage Range

• 64−Byte Page Write Buffer

• Hardware Write Protection for Entire Memory

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

• Low Power CMOS Technology

• 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• UDFN8 2 x 3 mm Wettable Flank Package

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant*