NV24C08MUW3VLTBG集成电路（IC）的存储器规格书PDF中文资料

NV24C08MUW3VLTBG属于集成电路（IC）的存储器。由安森美半导体公司制造生产的NV24C08MUW3VLTBG存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

描述 Description

The NV24C08LV are 8−Kb CMOS Serial EEPROM devices that

operate at a minimum 1.7 V supply voltage. They are organized

internally as 64 pages of 16 bytes each. All devices support the

Standard (100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C

protocol.

Data is written by providing a starting address, then loading 1 to 16

contiguous bytes into a Page Write Buffer, and then writing all data to

non−volatile memory in one internal write cycle. Data is read by

providing a starting address and then shifting out data serially while

automatically incrementing the internal address count.

External address pins make it possible to address up to two

NV24C08 device on the same bus.

特性 Features

• Automotive AEC−Q100 Grade 1 (−40°C to +125°C) Qualified

• Supports Standard, Fast and Fast−Plus I2C Protocol

• 1.7 V to 5.5 V Supply Voltage Range

• 16−Byte Page Write Buffer

• Fast Write Time (4 ms max)

• Hardware Write Protection for Entire Memory

• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs

(SCL and SDA)

• Low power CMOS Technology

• More than 1,000,000 Program/Erase Cycles

• 100 Year Data Retention

• Automotive Grade 1 Temperature Range

• SOIC, TSSOP, US 8−Lead, TSOP−5 Lead and Wettable Flank UDFN

8−pad Packages

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant