丝印：880N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 32 m, 22 A

文件：209 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel

文件：208.45 Kbytes 页数：7 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H880NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：277.24 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 29 m, 22 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVTFS6H880NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：277.24 Kbytes 页数：8 Pages

ONSEMI

安森美半导体