MOSFET – P-Channel, POWERTRENCH -20 V, -56 A, 4 m

General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features • Max RDS(on) = 4 m at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 5.7 m at VGS = −2.5 V, ID = −16 A • Max R

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ONSEMI

安森美半导体

Power MOSFET, Single, P-Channel, -20V, -56A, 4mΩ, PQFN8 3x3

The latest POWERTRENCH P-Channel MOSFET technology with optimized On-resistance and less gate charge.\n\n • Lower on-resistance\n• Smaller gate charge\n\n;

ONSEMI

安森美半导体

WDFN-8

ON

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WDFN-8

ON

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原厂原封

ON

上传：深圳科宇泰科技有限公司